elektronische bauelemente SSG9904 7.2a, 40v, r ds(on) 26m ? dual-n enhancement mode power mosfet 25-apr-2014 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g 9904ss = date code rohs compliant product a suffix of -c specifies halogen & lead-free description the SSG9904 provide the designer with the best combination of fast switching, ruggedized devic e design, ultra low on-resistance and cost-effectiveness. features low on-resistance simple drive requirement double-n mosfet package marking code package information package mpq leader size sop-8 3k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v t a = 25c 7.2 continuous drain current@ v gs =10v 1 t a = 70c i d 5.6 a pulsed drain current 2 i dm 14.5 a single pulse avalanche energy 3 eas 28 mj avalanche current i as 17.8 a power dissipation@ t c =25c 4 p d 2.5 w operating junction & storage temperature range t j , t stg -55~150 c thermal resistance ratings thermal resistance junction-ambient (max.) 1 r ja 85 c / w thermal resistance junction-case (max.) 1 r jc 50 c / w sop-8 millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. g s g s d d d d
elektronische bauelemente SSG9904 7.2a, 40v, r ds(on) 26m ? dual-n enhancement mode power mosfet 25-apr-2014 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss 40 - - v v gs =0v, i d =250 a breakdown voltage temp. coefficient bv ds / t j - 0.034 - v / c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 14 - s v ds =5v, i d =6a gate-body leakage i gss - - 100 na v gs =20v - - 1 v ds =32v,v gs =0, t j =25c zero gate voltage drain current i dss - - 5 a v ds =32v,v gs =0, t j =55c - - 26 v gs =10v, i d =6a drain-source on-resistance 2 r ds(on) - - 35 m v gs =4.5v, i d =4a total gate charge q g - 5.5 - gate-source charge q gs - 1.25 - gate-drain (miller) charge q gd - 2.5 - nc i d = 6a v ds = 20v v gs = 4.5v turn-on delay time t d(on) - 8.9 - rise time t r - 2.2 - turn-off delay time t d(off) - 41 - fall time t f - 2.7 - ns v ds = 20v i d = 1a v gs = 10v r g = 3.3 r d = 20 input capacitance c iss - 593 - output capacitance c oss - 76 - reverse transfer capacitance c rss - 56 - pf v gs =0v v ds =15v f=1.0mhz guaranteed avalanche characteristics single pulse avalanche energy 5 eas 9 - - mj v dd = 25v, l=0.1mh, i as = 10a source-drain diode forward on voltage 2 v ds - - 1.2 v i s =1a, v gs =0v continuous source current 1,6 i s - 7.2 - a pulsed source current 2,6 i sm - 14.5 - a v gs = v ds =0v, force current notes: 1. surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 135 /w when mounted on min. copper pad. 2. the data tested by pulsed, pulse width Q 300us, duty cycle Q 2%. 3. the eas data shows max. rating. the test conditi on is vdd=25v, vgs=10v, l=0.1mh, ias=17.8a. 4. the power dissipation is limited by 150 junction temperature. 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as id and idm , in real applications, should be limited by total power dissipation.
elektronische bauelemente SSG9904 7.2a, 40v, r ds(on) 26m ? dual-n enhancement mode power mosfet 25-apr-2014 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
elektronische bauelemente SSG9904 7.2a, 40v, r ds(on) 26m ? dual-n enhancement mode power mosfet 25-apr-2014 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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